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AMD provided additional details on its next-generation, silicon-on-insulator (SOI) transistor design for use in microprocessors. AMD’s transistor design uses three gates and is geared for the 45-nm node, although the circuit can be scaled down to 20-nm and below. The transistor is not dependent upon the use of high-k gate dielectric materials, which have been...

The post AMD Future High-Speed Transistors appeared first on VR-Zone.

AMD Future High-Speed Transistors

AMD provided additional details on its next-generation, silicon-on-insulator (SOI) transistor design for use in microprocessors. AMD’s transistor design uses three gates and is geared for the 45-nm node, although the circuit can be scaled down to 20-nm and below. The transistor is not dependent upon the use of high-k gate dielectric materials, which have been...

The post AMD Future High-Speed Transistors appeared first on VR-Zone.