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Innovative Silicon unveiled a basic technology for DRAM that does not require storage capacitors in the bit cells. The approach, dubbed Z-RAM, uses the floating-body effect in SoI transistors as a storage mechanism. The result is a DRAM cell that can be fabricated in a standard SoI CMOS logic process, occupies half the area of...

The post New Z-RAM DRAM Technology appeared first on VR-Zone.

New Z-RAM DRAM Technology

Innovative Silicon unveiled a basic technology for DRAM that does not require storage capacitors in the bit cells. The approach, dubbed Z-RAM, uses the floating-body effect in SoI transistors as a storage mechanism. The result is a DRAM cell that can be fabricated in a standard SoI CMOS logic process, occupies half the area of...

The post New Z-RAM DRAM Technology appeared first on VR-Zone.