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Samsung announced three next-generation memory devices: a 4Gbit NAND flash chip made on 70nm processing, a 3Gbs data rate DRAM using a 3D transistor design, and a monolithic 512Mb NAND flash and logic interface on the same chip. Samsung had developed a 3D transistor, which it calls Recess Channel Array Transistor (RCAT), for a 512Mb...

The post Samsung 3 New Memory Devices appeared first on VR-Zone.

Samsung 3 New Memory Devices

Samsung announced three next-generation memory devices: a 4Gbit NAND flash chip made on 70nm processing, a 3Gbs data rate DRAM using a 3D transistor design, and a monolithic 512Mb NAND flash and logic interface on the same chip. Samsung had developed a 3D transistor, which it calls Recess Channel Array Transistor (RCAT), for a 512Mb...

The post Samsung 3 New Memory Devices appeared first on VR-Zone.