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IBM today announced it has developed a new method of manufacturing low power, high performance microprocessors using an industry-first combination of silicon-on-insulator (SOI), strained silicon and copper wiring technologies. IBM is putting the technique immediately to work in volume 90 nanometer production at its 300mm manufacturing facility. Powered by 58 million transistors, 64-bit PowerPC 970FX...

The post IBM 90nm, SOI, Strained Silicon Chip appeared first on VR-Zone.

IBM 90nm, SOI, Strained Silicon Chip

IBM today announced it has developed a new method of manufacturing low power, high performance microprocessors using an industry-first combination of silicon-on-insulator (SOI), strained silicon and copper wiring technologies. IBM is putting the technique immediately to work in volume 90 nanometer production at its 300mm manufacturing facility. Powered by 58 million transistors, 64-bit PowerPC 970FX...

The post IBM 90nm, SOI, Strained Silicon Chip appeared first on VR-Zone.