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UMC today announced the discovery of a new engineering technique that enhances Silicon-on-Insulator (SOI) transistor performance. The Direct-Tunneling induced Floating-Body Potential, which is a manipulation technique that magnifies a certain device physics behavior, provides PMOS transistors a 30 percent increase in drive current compared to conventional body-grounded SOI transistors. Unlike other performance enhancing techniques such...

The post UMC Enhances SOI Performance appeared first on VR-Zone.

UMC Enhances SOI Performance

UMC today announced the discovery of a new engineering technique that enhances Silicon-on-Insulator (SOI) transistor performance. The Direct-Tunneling induced Floating-Body Potential, which is a manipulation technique that magnifies a certain device physics behavior, provides PMOS transistors a 30 percent increase in drive current compared to conventional body-grounded SOI transistors. Unlike other performance enhancing techniques such...

The post UMC Enhances SOI Performance appeared first on VR-Zone.